• DocumentCode
    2360855
  • Title

    The study of the intrinsic charges in SiO2 electrets

  • Author

    Huamao, Lin ; Zhongfu, XIA ; Shaoqun, Shen

  • Author_Institution
    Pohl Inst. of Solid State Phys., Tongji Univ., Shanghai, China
  • fYear
    1994
  • fDate
    7-9 Sep 1994
  • Firstpage
    107
  • Lastpage
    112
  • Abstract
    It is found that there are four kinds of intrinsic charges in the thermally wet grown SiO2 electret. They are positive mobile ionic charges, fixed oxide charges, interface trapped charges and oxide trapped space charges. Our experimental results and theoretical analyses point out that these four kinds of charges in the thermally wet grown SiO2 electret affect the structure of the energy levels of the SiO2, change the trapping and detrapping conditions of the electrons which are injected into SiO2 by means of negative corona charging. In this way they influence the stability of the space charges in the electret remarkably
  • Keywords
    electrets; electron traps; silicon compounds; space charge; SiO2; SiO2 electrets; detrapping conditions; energy levels structure; fixed oxide charges; interface trapped charges; intrinsic charges; negative corona charging; oxide trapped space charges; positive mobile ionic charges; space charge stability; thermally wet grown electret; trapping conditions; Corona; Electrets; Electron traps; Oxidation; Polymers; Silicon; Space charge; Surface charging; Surface treatment; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1994. (ISE 8), 8th International Symposium on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-1940-0
  • Type

    conf

  • DOI
    10.1109/ISE.1994.514752
  • Filename
    514752
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2360855