Analysis and optimization of erasing waveform in phase change memory arrays

Phase transition of chalcogenide materials from amorphous to crystalline (also known as the erasing mechanism), in phase change memory arrays (PCM), is obtained by an electrothermal induced process. The change of temperature in the programmable volume of a PCM cell, is achieved by a voltage waveform applied to a heater element, which furthermore affect cell active material. Erasing waveform choice is a critical step for memory reliability and strictly depends by the system application where memory is fitted in. This paper is intended to provide a study of the common used erasing waveform, evidencing the crystallization mechanism implemented, performing the parameters extraction of each waveform and then optimize them in order to get best performance.