Title :
Water related electronic traps at the surface of silicon nitride electret layers
Author :
Vasilenko, Vladimir ; Komarov, Sergey ; Tseselska, Lina ; Roizin, Yacov
Author_Institution :
Dept. of Noncrystalline Electron. Syst., Odessa State Univ., Ukraine
Abstract :
A novel technique for measuring the value of charge and for evaluating its centroid position in the electret layers is proposed. A scanning mercury probe is employed for measurements of flat band voltage shift and erasure current of a semiconductor-electret structure placed in environments with high humidity. We used this technique for photoconductivity measurements in silicon nitride films. For the first time deep electronic water related traps in silicon nitride were observed
Keywords :
MIS structures; electrets; electron traps; humidity; insulating thin films; photoconductivity; semiconductor-insulator boundaries; silicon compounds; water; MNOS structure; Si3N4; Si3N4 surface; centroid position; charge; electret layers; erasure current; flat band voltage shift; high humidity; photoconductivity; semiconductor-electret structure; water related electronic traps; Charge measurement; Current measurement; Electrets; Electron traps; Humidity measurement; Photoconductivity; Position measurement; Probes; Silicon; Voltage;
Conference_Titel :
Electrets, 1994. (ISE 8), 8th International Symposium on
Conference_Location :
Paris
Print_ISBN :
0-7803-1940-0
DOI :
10.1109/ISE.1994.514754
