DocumentCode :
2360922
Title :
Amorphous covalent dielectrics-new category of materials
Author :
Tyczkowski, Jacek ; Kazimierski, Piotr
Author_Institution :
Centre of Molecular & Macromolecular Studies, Polish Acad. of Sci., Lodz, Poland
fYear :
1994
fDate :
7-9 Sep 1994
Firstpage :
130
Lastpage :
135
Abstract :
The concept of amorphous covalent dielectrics is presented. It is shown that plasma-deposited Si-C and Ge-C films exist in two qualitatively different groups. The first group consists of typical amorphous semiconductors while the second one is categorized as amorphous dielectrics. The most important feature distinguishing one group from another is the lack of extended states in the dielectrics
Keywords :
amorphous semiconductors; amorphous state; dielectric materials; dielectric thin films; germanium compounds; localised states; plasma deposited coatings; semiconductor thin films; silicon compounds; Ge-C; Si-C; amorphous covalent dielectrics; lack of extended states; plasma-deposited Ge-C films; plasma-deposited Si-C films; Amorphous materials; Charge carrier processes; Chemical vapor deposition; Dielectric materials; Dielectric thin films; Glass; Plasma materials processing; Polymers; Semiconductor films; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 1994. (ISE 8), 8th International Symposium on
Conference_Location :
Paris
Print_ISBN :
0-7803-1940-0
Type :
conf
DOI :
10.1109/ISE.1994.514756
Filename :
514756
Link To Document :
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