Polarization properties of layers in As-Se modified system

Author

Anisimova, N. ; Avanesyan, V. ; Bordovski, V. ; Castro, R. ; Nagaytcev, A.

Author_Institution

Herzen State Pedagogical Univ. of Russia, St. Petersburg, Russia

fYear

1994

fDate

7-9 Sep 1994

Firstpage

136

Lastpage

141

Abstract

Charge processes which take place in chalcogenide glasses to a great extent determine the properties of these materials and therefore are decisive in their practical application. In this work we investigate the influence of an admixturing factor (Pb) on the polarization processes and on the transport of charge carriers in thin layers of chalcogenide glasses of As-Se system in an infralow frequencies region (10^-6…10^-1 Hz)

Keywords

arsenic compounds; carrier mobility; chalcogenide glasses; deep levels; dielectric losses; dielectric polarisation; dielectric thin films; electrets; lead compounds; localised states; permittivity; selenium compounds; semiconductor thin films; small polaron conduction; 1E-6 to 1E-1 Hz; As-Se modified system; As-Se-Pb; admixturing factor; chalcogenide glasses; charge carriers transport; infralow frequencies region; polarization processes; semiconductor; thin layers; Atomic layer deposition; Charge carriers; Energy states; Frequency; Glass; Isothermal processes; Optical polarization; Permittivity measurement; Positron emission tomography; Regions;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 1994. (ISE 8), 8th International Symposium on

Conference_Location

Paris

Print_ISBN

0-7803-1940-0

Type

conf

DOI

10.1109/ISE.1994.514757

Filename

514757