Title :
Temperature compensation of SAW in ZnO/SiO2/Si structure
Author :
Wu, P. ; Emanetoglu, N.W. ; Tong, X. ; Lu, Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
Temperature stability is a critical issue for SAW devices in communication and sensor applications. The negative temperature coefficient of delay (TCD) of SiO2 makes it suitable as a compensation layer in multilayer structures where the piezoelectric layer possesses a positive TCD. In this work, the SAW propagation properties, including velocity dispersion, electro-mechanical coupling coefficients, and propagation attenuation in ZnO/SiO2/Si structures are investigated using the transfer matrix method. For different thickness ratios of ZnO to SiO2, temperature compensation of the second GSAW modes at frequencies in the range of 1 GHz to 3 GHz is calculated. The simulation results show good temperature stability at 2.4 GHz when the ZnO:SiO2 thickness ratio is 2:3 and total film thickness is 3 μm
Keywords :
II-VI semiconductors; acoustic wave propagation; acoustic wave velocity; elemental semiconductors; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; surface acoustic wave devices; surface acoustic waves; zinc compounds; 1 to 3 GHz; 2.4 GHz; 3 micron; SAW propagation; SAW temperature compensation; ZnO-SiO2-Si; ZnO/SiO2/Si structure; communication applications; delay; electro-mechanical coupling coefficients; multilayer structures; negative temperature coefficient; piezoelectric layer; propagation attenuation; sensor applications; temperature stability; thickness ratios; velocity dispersion; Attenuation; Delay; Frequency; Nonhomogeneous media; Stability; Surface acoustic wave devices; Surface acoustic waves; Temperature distribution; Temperature sensors; Zinc oxide;
Conference_Titel :
Ultrasonics Symposium, 2001 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-7177-1
DOI :
10.1109/ULTSYM.2001.991611
