Title :
Challenges and prospects of RF oscillators using silicon resonant tunneling diodes
Author :
Buccafurri, E. ; Medjahdi, A. ; Calmon, F. ; Clerc, R. ; Pala, M. ; Poncet, A. ; Ghibaudo, G.
Author_Institution :
INL, INSA-Lyon, Villeurbanne, France
Abstract :
Advanced SOI and strained-SOI (s-SOI) technologies may be an alternative option to integrate resonant tunneling diodes (RTD) in a silicon process. To investigate the expected performances of such technologies, a complete DC and AC compact model of silicon RTD has been proposed, and implemented in a circuit simulator. RTD based RF oscillators have been simulated and compared to more conventional silicon circuits. Even if SOI based RTD offers lower performances than their III-V counterparts, it turns out that extremely low power RF oscillator at 20 GHz can be realized on silicon using this technology.
Keywords :
elemental semiconductors; equivalent circuits; radiofrequency oscillators; resonant tunnelling diodes; semiconductor device models; silicon; silicon-on-insulator; AC compact model; DC compact model; RF oscillators; RTD equivalent circuit model; Si; advanced SOI technology; circuit simulator; frequency 20 GHz; radiofrequency oscillators; silicon resonant tunneling diodes; silicon-on-insulator; strained-SOI technology; Analytical models; Circuit simulation; Diodes; Oscillators; Quantum capacitance; Quantum computing; Radio frequency; Resonance; Resonant tunneling devices; Silicon on insulator technology;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331485