Application of SiC-JFETs in current source inverter topologies

Author

Koch, I. ; Hinrichsen, F. ; Canders, W.-R.

Author_Institution

Inst. for Electr. Machines, Traction & Drives, Technische Univ. Braunschweig

fYear

2005

fDate

11-14 Sept. 2005

Abstract

SiC-JFETs are promising for many future applications but have a normally-on behaviour, which usually necessitates an auxiliary MOSFET to achieve self-blocking capability. However this characteristic is predestinated to current source inverter topologies as an attractive alternative for fast switching applications. The paper presents practical investigations of SiC-JFETs with a modified driver stage in a current source inverter and for comparison in a voltage source inverter topology. Measurement results of both topologies at a frequency of 250 kHz are included. Furthermore differences in the minimising of switching losses for each topology are shown

Keywords

MOSFET; driver circuits; junction gate field effect transistors; network topology; silicon compounds; switching convertors; wide band gap semiconductors; 250 kHz; JFET; SiC; auxiliary MOSFET; current source inverter topology; self-blocking capability; switching applications; switching losses; voltage source inverter topology; Circuit topology; Diodes; Inverters; MOSFET circuits; Power electronics; Semiconductor materials; Silicon carbide; Switches; Switching loss; Voltage; JFET; SiC-device; current source inverter (CSI); device application; silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2005 European Conference on

Conference_Location

Dresden

Print_ISBN

90-75815-09-3

Type

conf

DOI

10.1109/EPE.2005.219542

Filename

1665732