Title :
In-situ gate oxide/electrode deposition for a 0.5 μm BiCMOS process flow
Author :
Carbone, Thomas A. ; Solomon, Gary
Author_Institution :
Fairchild Semicond., South Portland, ME, USA
Abstract :
A method of depositing the gate oxide and electrode in a single chamber for BiCMOS processing is discussed. The advantages of the deposition of in situ gate electrode (DIGE) over the conventional two step oxidation and polycrystalline silicon deposition is related to cycle time and increased gate oxide integrity. TEM images and a correlation to metrology measurements are presented
Keywords :
BiCMOS integrated circuits; dielectric thin films; electrodes; integrated circuit interconnections; integrated circuit measurement; integrated circuit reliability; oxidation; transmission electron microscopy; 0.5 micron; BiCMOS process flow; BiCMOS processing; Si; Si-SiO2-Si; TEM images; cycle time; electrode deposition; gate oxide deposition; gate oxide integrity; in situ gate electrode deposition; in-situ gate oxide/electrode deposition; metrology; oxidation; polycrystalline silicon deposition; single chamber deposition; BiCMOS integrated circuits; CMOS logic circuits; CMOS process; Costs; Electrodes; Implants; Logic gates; Metrology; Oxidation; Silicon;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-4380-8
DOI :
10.1109/ASMC.1998.731549
