In-situ gate oxide/electrode deposition for a 0.5 μm BiCMOS process flow

Author

Carbone, Thomas A. ; Solomon, Gary

Author_Institution

Fairchild Semicond., South Portland, ME, USA

fYear

1998

fDate

23-25 Sep 1998

Firstpage

174

Lastpage

180

Abstract

A method of depositing the gate oxide and electrode in a single chamber for BiCMOS processing is discussed. The advantages of the deposition of in situ gate electrode (DIGE) over the conventional two step oxidation and polycrystalline silicon deposition is related to cycle time and increased gate oxide integrity. TEM images and a correlation to metrology measurements are presented

Keywords

BiCMOS integrated circuits; dielectric thin films; electrodes; integrated circuit interconnections; integrated circuit measurement; integrated circuit reliability; oxidation; transmission electron microscopy; 0.5 micron; BiCMOS process flow; BiCMOS processing; Si; Si-SiO₂-Si; TEM images; cycle time; electrode deposition; gate oxide deposition; gate oxide integrity; in situ gate electrode deposition; in-situ gate oxide/electrode deposition; metrology; oxidation; polycrystalline silicon deposition; single chamber deposition; BiCMOS integrated circuits; CMOS logic circuits; CMOS process; Costs; Electrodes; Implants; Logic gates; Metrology; Oxidation; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI

Conference_Location

Boston, MA

ISSN

1078-8743

Print_ISBN

0-7803-4380-8

Type

conf

DOI

10.1109/ASMC.1998.731549

Filename

731549