DocumentCode :
2361270
Title :
Charge distributions in electron-beam irradiated Kapton PI and Teflon FEP films
Author :
Yang, G.M. ; Sessler, G.M.
Author_Institution :
Inst. for Electroacoust., Tech. Univ. Darmstadt, Germany
fYear :
1994
fDate :
7-9 Sep 1994
Firstpage :
248
Lastpage :
253
Abstract :
Charge distributions in 25 μm thick films of Kapton PI and Teflon FEP, charged with 20 and 30 keV electron beams, are measured with the laser-induced pressure-pulse (LIPP) method directly after charging or after additional annealing periods at 120°C. The charge distributions show changes with annealing time which suggest slow and fast retrapping, with Schubwegs at 120°C of >20 μm and ~5 μm for PI and FEP, respectively. Corresponding μτ-products are >6×10-9 and ~10-9 cm2/V
Keywords :
annealing; carrier density; carrier mobility; dielectric thin films; electrets; electric breakdown; electron beam effects; polymer films; 120 C; 20 keV; 25 mum; 30 keV; Kapton PI film; Teflon FEP film; annealing periods; charge distributions; electron-beam irradiated; laser-induced pressure-pulse method; retrapping; Annealing; Charge measurement; Current measurement; Electrodes; Electron beams; Laser beam cutting; Laser mode locking; Pulse amplifiers; Pulsed laser deposition; Surface charging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 1994. (ISE 8), 8th International Symposium on
Conference_Location :
Paris
Print_ISBN :
0-7803-1940-0
Type :
conf
DOI :
10.1109/ISE.1994.514776
Filename :
514776
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2361270
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