Title :
Effects of process parameters on particle formation in SiH4 -N2O PECVD and WF6 CVD processes
Author :
Wu, Z. ; Nijhawan, S. ; Campbell, S.A. ; Rao, N. ; McMurry, P.H.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
Particle beam mass spectroscopy is used to determine the effects of various process parameters on particle production in PECVD of SiO2 from silane and nitrous oxide and the thermal deposition of tungsten using both silane and hydrogen reductions of WF6. In all cases, the substrate temperature played a critical role in determining the concentration of particles observed in the effluent. Plasma power (in the PECVD process) and pressure (in the thermal processes) were also important variables. The real time capability of the system was used to demonstrate transient particle effects in all processes
Keywords :
chemical vapour deposition; dielectric thin films; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; mass spectra; mass spectroscopic chemical analysis; nitrogen compounds; plasma CVD; plasma properties; real-time systems; reduction (chemical); silicon compounds; surface contamination; tungsten; tungsten compounds; H2; SiH4; SiH4-N2O; SiH4-N2O PECVD; SiO2; SiO2 PECVD; W; WF6; WF6 CVD process; effluent particles; hydrogen reduction; nitrous oxide precursor; particle beam mass spectroscopy; particle concentration; particle formation; particle production; plasma power; process parameter effects; process parameters; silane precursor; silane reduction; substrate temperature; system real time capability; thermal deposition; thermal process pressure; transient particle effects; tungsten CVD; Aerodynamics; Effluents; Electron emission; Lenses; Mass spectroscopy; Monitoring; Particle beams; Particle measurements; Plasma temperature; Voltage;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-4380-8
DOI :
10.1109/ASMC.1998.731558
