DocumentCode
2361507
Title
Advantages to point of use filtration of photoresists in reducing contamination on the wafer surface
Author
Capitanio, Dennis
Author_Institution
Dept. of Sci. & Lab. Services, Pall Corp., Port Washington, NY, USA
fYear
1998
fDate
23-25 Sep 1998
Firstpage
247
Lastpage
251
Abstract
The trends toward narrower line widths in IC manufacture has placed an ever increasing burden on contamination control in every aspect of semiconductor fabrication. Point-of-use (POU) filtration of photoresists has been used to control particle contamination on the wafer surface during coating operations. The need for tighter filtration has led to the introduction of 0.05 μm as well as the traditional 0.10 μm membranes to control contamination during photoresist dispensing. With the introduction of tighter membranes for use in photoresist filtration, the end-user may have concerns that the photoresist may suffer some deleterious effects by undergoing filtration. This study centers on the use of 0.05 μm and 0.10 μm Pall Falcon(R) filters in dispensing Microposit S1813 photoresist for reduction of surface defects on the wafer surface. The results of gel permeation chromatography (GPC) on filtered and unfiltered photoresist showed no effect on the molecular weight of the photosensitive components. Viscosity and coating thickness results indicated no loss in solids that would have an effect on the viscosity and in turn the coating thickness on the wafer surface. G-line exposure demonstrated retention of photospeed, indicating no damaging effects on resin or photosensitive components. The applications of filtration to photoresist dispensing are demonstrated as a positive step to lowering contamination on the wafer surface without deleterious effects on the performance of the photoresist
Keywords
chromatography; coating techniques; filtration; integrated circuit testing; integrated circuit yield; membranes; photolithography; photoresists; surface contamination; viscosity; 0.05 micron; 0.1 micron; IC manufacture; Microposit S1813 photoresist; POU filtration; Pall Falcon filters; coating operations; coating thickness; contamination control; filtered photoresist; filtration; g-line exposure; gel permeation chromatography; line width; membrane size; membranes; particle contamination; photoresist dispensing; photoresist filtration; photoresist performance; photoresists; photosensitive components; photospeed; point of use filtration; semiconductor fabrication; surface defects; unfiltered photoresist; viscosity; wafer surface; wafer surface contamination; Biomembranes; Coatings; Fabrication; Filters; Filtration; Resists; Semiconductor device manufacture; Solids; Surface contamination; Viscosity;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI
Conference_Location
Boston, MA
ISSN
1078-8743
Print_ISBN
0-7803-4380-8
Type
conf
DOI
10.1109/ASMC.1998.731566
Filename
731566
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