• DocumentCode
    2361511
  • Title

    Small signal modeling of charge and piezoresistive modulations in active MEM resonators

  • Author

    Grogg, D. ; Ayöz, S. ; Tsamados, D. ; Ionescu, A.M.

  • Author_Institution
    Nanoelectronic Devices Lab., Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    379
  • Lastpage
    382
  • Abstract
    In this work we establish novel analytical and small signal circuit modeling of two major effects that co-exist in active micro-electro-mechanical resonators: charge and piezoresistance modulations. Analytical expressions for the output current of vibrating body field effect transistors including capacitive, FET and piezoresistive current components are established and an equivalent small signal circuit is validated experimentally. Two design cases of vibrating FETs are studied and analyzed in detail: (i) a 2 MHz flexural mode resonator operating in a charge-dominant modulation, (ii) a 30 MHz bulk mode resonator operating with significant piezoresistive modulation. Proposed models are able to accurately predict device transfer characteristics at resonance and the influence of various bias levels and configurations.
  • Keywords
    equivalent circuits; field effect transistors; micromechanical resonators; piezoresistive devices; vibrations; FET; active MEM resonator; bulk mode resonator; capacitive components; charge modulation; equivalent circuit; flexural mode resonator; frequency 2 MHz; frequency 30 MHz; microelectromechanical resonators; piezoresistive current components; piezoresistive modulation; small signal circuit modeling; transfer characteristics; vibrating body field effect transistor; Circuits; Electrostatics; FETs; Geometry; Nanoscale devices; Piezoresistance; Resonance; Signal analysis; Vibrations; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
  • Conference_Location
    Athens
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-4351-2
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2009.5331508
  • Filename
    5331508