Uses of corona oxide silicon (COS) measurements for diffusion process monitoring and troubleshooting

Author

Cosway, Richard G. ; Catmull, Kelvin B. ; Shray, Janie ; Naujokaitis, Robert ; Peters, Megan ; Grant, Don ; Horner, G. ; Letherer, Brian

Author_Institution

Motorola Inc., Chandler, AZ, USA

fYear

1998

fDate

23-25 Sep 1998

Firstpage

262

Lastpage

265

Abstract

The dynamic nature of modern semiconductor fabrication facilities requires metrology tools that can be used to diagnose infrequent problems. However, due to the high cost of clean room floor space, these tools should also provide routine monitoring capability and be able to diagnose numerous issues. For a diffusion area, the corona oxide silicon (COS) measurement technique lends itself well to double duty as both an engineering and production tool

Keywords

clean rooms; corona; dielectric thin films; diffusion; integrated circuit measurement; ionisation; process monitoring; silicon compounds; COS measurements; Si; SiO₂-Si; clean room floor space cst; corona oxide silicon measurements; diffusion area; diffusion process monitoring; diffusion process troubleshooting; engineering tool; metrology tools; monitoring capability; production tool; semiconductor fabrication facilities; Charge measurement; Corona; Costs; Current measurement; Dielectric measurements; Electric variables measurement; Furnaces; Monitoring; Silicon; Vibration measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI

Conference_Location

Boston, MA

ISSN

1078-8743

Print_ISBN

0-7803-4380-8

Type

conf

DOI

10.1109/ASMC.1998.731569

Filename

731569