Title :
Mobility reduction and reliability assessment of high-k/metal gate stacks in deep sub-nanometer EOT region
Author :
Heh, Dawei ; Bersuker, Gennadi ; Huang, Jeff ; Kirsch, Paul D. ; Tseng, Hsing-Huang ; Jammy, Raj
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
A reliability study of high-k/metal gate stack transistors with a sub-nanometer equivalent oxide thickness (EOT) and engineered interfacial layer (IL) having a k value higher than that of conventional SiO2 thin film is reported. The mobility reduction in these ldquozerordquo SiOx IL devices exhibits a consistent trend of a positive charge buildup and increased interface state density associated with scaling the IL thickness. The stress-induced degradation of these sub-nanometer EOT devices is found to correlate with defect generation in the IL near the dielectric/Si substrate interface.
Keywords :
MOSFET; carrier mobility; high-k dielectric thin films; reliability; silicon compounds; CMOS process; SiO2; defect generation; equivalent oxide thickness; high-k-metal gate stack transistor; interface state density; interfacial layer; mobility reduction; reliability assessment; stress-induced degradation; Degradation; Dielectric devices; Dielectric measurements; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; Interface states; Leakage current; Optical scattering; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331522
