Title :
O2 post deposition anneal of Al2O3 blocking dielectric for higher performance and reliability of TANOS Flash memory
Author :
Rothschild, A. ; Breuil, L. ; Van den Bosch, G. ; Richard, O. ; Conard, T. ; Franquet, A. ; Cacciato, A. ; Debusschere, I. ; Jurczak, M. ; Van Houdt, J. ; Kittl, J.A. ; Ganguly, U. ; Date, L. ; Boelen, P. ; Schreutelkamp, R.
Author_Institution :
IMEC vzw, Leuven, Belgium
Abstract :
TANOS Charge Trap Flash Approach (CTF) is a candidate to replace floating gate approach (FG) for sub-32 nm technology node. However the main challenge for TANOS is its poor retention characteristics. In this paper, we show that by performing an O2 anneal after Al2O3 deposition the charge retention is considerably improved as well as the other memory characteristics: program, erase, endurance.
Keywords :
alumina; aluminium compounds; annealing; flash memories; reliability; silicon compounds; tantalum compounds; TANOS charge trap flash approach; TANOS flash memory; TaN-Al2O3-Si3N4-SiO2; blocking dielectrics; charge retention; floating gate approach; postdeposition annealing; reliability; size 32 nm; Annealing; Artificial intelligence; Capacitors; Dielectric materials; Flash memory; Material properties; Nonvolatile memory; Robustness; Thermal degradation; Transmission electron microscopy;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331523
