Title :
Switching ruggedness of high-power diodes
Author :
Falck, E. ; Schulze, H.-J. ; Schmidt, G. ; Niedernostheide, F.-J. ; Pfaffenlehner, M.
Author_Institution :
Infineon Technol. AG, Munich
Abstract :
The ruggedness of high-power diodes is an important quality feature in fast-switching processes from the conducting to the blocking state. In this paper, diodes with three different types of junction terminations are analyzed in detail by numerical simulations. Furthermore, the influence of positive charges in the dielectric layer covering the junction termination, and the local reduction of the charge carrier lifetime on diode ruggedness is investigated
Keywords :
carrier lifetime; numerical analysis; p-n junctions; power semiconductor diodes; power semiconductor switches; charge carrier lifetime; dielectric layer; diode ruggedness; fast-switching processes; high-power diodes; junction terminations; local reduction; positive charges; Charge carrier lifetime; Dielectrics; Doping profiles; Numerical simulation; P-n junctions; Protection; Semiconductor device doping; Semiconductor diodes; Switching loss; Voltage; Bipolar device; High-power discrete device; Reliability; Reverse recovery; Simulation;
Conference_Titel :
Power Electronics and Applications, 2005 European Conference on
Conference_Location :
Dresden
Print_ISBN :
90-75815-09-3
DOI :
10.1109/EPE.2005.219588
