DocumentCode
2362139
Title
A fast power loss calculation method for long real time thermal simulation of IGBT modules for a three-phase inverter system
Author
Zhou, Z. ; Khanniche, M.S. ; Igic, P. ; Kong, T. ; Towers, M. ; Mawby, P.A.
Author_Institution
Sch. of Eng., Wales Swansea Univ.
fYear
2005
fDate
11-14 Sept. 2005
Abstract
A fast power losses calculation method for long real time thermal simulation of IGBT module for a three-phase inverter system is presented in this paper. The speed-up is obtained by simplifying the representation of the three-phase inverter at the system modelling stage this allows a inverter system to be simulated predicting the effective voltages and currents whilst using large time-step. An average power losses is calculated during each clock period, using a pre-defined look-up table, which stores the switching and on-state losses generated by either direct measurement or automatically based upon compact models for the semiconductor devices. This simulation methodology brings together accurate models of the electrical systems performance, state of the art-device compact models and a realistic simulation of the thermal performance in a useable period of CPU time and is suitable for a long real time thermal simulation of inverter power devices with arbitrary load. Thermal simulation results show that with the same IGBT characteristics applied, the proposed model can give the almost same thermal performance compared to the full physically based device modelling approach
Keywords
insulated gate bipolar transistors; invertors; losses; power bipolar transistors; power field effect transistors; switching convertors; table lookup; IGBT modules; average power losses; clock period; fast power loss calculation method; power semiconductor devices; predefined look-up table; real time thermal simulation; three-phase inverter system; Clocks; Insulated gate bipolar transistors; Inverters; Power semiconductor switches; Power system modeling; Predictive models; Real time systems; Table lookup; Thermal loading; Voltage; Device application; IGBT; Simulation; Voltage Source Inverters (VSI) Thermal design;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2005 European Conference on
Conference_Location
Dresden
Print_ISBN
90-75815-09-3
Type
conf
DOI
10.1109/EPE.2005.219598
Filename
1665788
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