DocumentCode :
2362805
Title :
Channel filters for microelectronic receivers of wireless systems
Author :
Korotkov, Alexander S. ; Morozov, Dmitry V. ; Tutyshkin, Alexander A. ; Hauer, Hans
Author_Institution :
St. Petersburg State Polytech Univ., Russia
fYear :
2005
fDate :
23-24 June 2005
Firstpage :
24
Lastpage :
31
Abstract :
A short overview of receiver architectures and low-pass filter specifications for wireless systems is reported. Two design procedures of low-pass filters for communication system are discussed. A CMOS transconductance-capacitor (Gm-C) filter with enhanced linearity is presented as the first one. The proposed design is based on a transconductance amplifier with enhanced linearity. For the elimination of the amplifier harmonic level the compensation principle is used. The device was realized as a balanced fifth-order 1 MHz low-pass Bessel filter in 0.35 μm CMOS process. The filter operates with a low supply voltage of +2.5 Volt. Its power consumption is 8.25 mW, the input referred RMS noise is 120 μV (0.01 + 2 MHz), and HD3 (1 VP-to-P @ 1 MHz) is -54 dB. Alternatively a new approach to the design of high-frequency filters with low power consumption is presented. The idea is to use current mode and voltage mode active elements with enhanced frequency range. These elements are second generation current conveyors and voltage buffers, those are used to implement integrators. The filter is realized as a switched-capacitor circuit based on an integrator chain with multi feedback loops. As an example a CMOS switched-capacitor filter with 1 MHz cut-off frequency is presented. The device was realized as an unbalanced fifth-order low-pass Chebyshev filter in 03 μm CMOS process. The filter operates with supply voltage varying from +2.5 V to +3 V. Depending on the supply voltage its power consumption is from 3 mW to 10 mW, the input referred RMS noise is 1.9 mV (0.02 + 2 MHz @ +3 V), and HD3 (2 VP-to-P @ 900 kHz @ +3 V) is -54 dB.
Keywords :
Bluetooth; CMOS integrated circuits; Chebyshev filters; capacitors; channel bank filters; low-pass filters; radio receivers; radiofrequency amplifiers; radiofrequency filters; radiofrequency integrated circuits; wireless LAN; 0.35 mum; 1 MHz; 120 muV; 2.5 to 3 V; 3 to 10 mW; 8.25 mW; 900 kHz; Bluetooth; CMOS transconductance-capacitor; Channel filters; WLAN; current mode; dummy switch; high-frequency filter; low-pass Bessel filter; low-pass Chebyshev filter; microelectronic filter; power consumption; transconductance amplifier; voltage buffer; voltage mode; wireless system; CMOS process; Energy consumption; Frequency; Linearity; Low pass filters; Low voltage; Microelectronics; Power filters; Power harmonic filters; Transconductance; Bluetooth; DECT; Gm-C filter; High-frequency microelectronic filter; WLAN; cell phones; dummy switch; low power consumption; second generation current conveyor; switched-capacitor filter; transconductance amplifier; voltage buffer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Technologies: Circuits and Systems for 4G Mobile Wireless Communications, 2005. ETW '05. 2005 IEEE 7th CAS Symposium on
Print_ISBN :
5-7422-0895-2
Type :
conf
DOI :
10.1109/EMRTW.2005.195673
Filename :
1529540
Link To Document :
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