Title :
A study of boron doping profile control for a low Vt device used in the advanced low power, high speed mixed-signal IC
Author :
Chen, Alec ; Flessner, Kyle ; Sana, Peyman ; Dixon, Robert ; Malone, Farris ; Ying, Peter ; Hutter, Lou
Author_Institution :
DFAB Product Group, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The effects of through-gate oxide implantation on gate oxide integrity (GOI) and defect density have been investigated. It is observed that through-gate implants can reduce the off-state leakage current by 1 to 2 orders, giving the same Vt value, and can maintain much tighter Vt spread control without sacrificing the GOI and yield performance. These attractive advantages make the through-gate oxide implant process a promising candidate for high speed, low power applications
Keywords :
CMOS integrated circuits; boron; dielectric thin films; doping profiles; elemental semiconductors; integrated circuit reliability; integrated circuit testing; integrated circuit yield; ion implantation; leakage currents; mixed analogue-digital integrated circuits; semiconductor process modelling; silicon; Si; SiO2-Si:B; boron doping profile control; defect density; gate oxide integrity; high speed mixed-signal IC; low power mixed-signal IC; low threshold voltage device; mixed signal CMOS process; mixed-signal IC; off-state leakage current; threshold voltage spread control; through-gate implants; through-gate oxide implant process; through-gate oxide implantation; yield performance; Boron; Degradation; Doping profiles; High speed integrated circuits; Implants; Leakage current; MOS devices; Signal processing; Temperature; Threshold voltage;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-4380-8
DOI :
10.1109/ASMC.1998.731640
