Full quantum mechanical simulation of a novel nanoscale DG-MOSFET: 2D NEGF approach

In this paper the electrical characteristics of a novel nanoscale double-gate MOSFET (DG-MOSFET) have been investigate by a full quantum mechanical simulation framework. This framework consists of non-equilibrium Green´s function (NEGF) solved self-consistently with Poisson´s equation. Quantum transport equations are solved in two-dimension (2D) by recursive NEGF method in active area of the device to obtain the charge density and Poisson´s equation is solved in entire domain of simulation to get potential profile. Once self-consistently achieved all parameters of interest (e.g. potential profile, charge density, DIBL, etc) can be measured. In this novel DG-MOSFET structure, a front gate consists of two side gates to electrically shield the channel region from any drain voltage variation. This structure exhibits significantly better short channel effects than conventional DG-MOSFET in nanometer regime.