Title :
A trench IGBT distributed model with thermo-sensible parameters
Author :
De Maglie, R. ; Austin, P. ; Mussard, L. ; Sanchez, J.-L. ; Elghazouani, M. ; Richardeau, F. ; Schanen, J.-L.
Author_Institution :
Laboratoire d´Analyses et d´Architecture des Syst., Toulouse
Abstract :
In this paper, a one-dimensional physical model with thermally dependent parameters of the trench insulated gate bipolar transistor (TIGBT) is presented. This model is implemented in the Saber simulator in MAST language. Simulation and experimental results are compared for different temperatures in order to validate the model in adiabatic conditions
Keywords :
insulated gate bipolar transistors; Saber simulator; one-dimensional physical model; thermosensible parameters; trench IGBT distributed model; trench insulated gate bipolar transistor; Buffer layers; Electronic mail; Electronics industry; Insulated gate bipolar transistors; Laboratories; Power electronics; Space charge; Temperature; Thyristors; Voltage; Device modelling; IGBT; Power semiconductor device;
Conference_Titel :
Power Electronics and Applications, 2005 European Conference on
Conference_Location :
Dresden
Print_ISBN :
90-75815-09-3
DOI :
10.1109/EPE.2005.219649
