Title :
Homogeneity characterization of lattice spacing of silicon single crystals
Author :
Waseda, Atsushi ; Fujimoto, Hiroshi ; Zhang, X.W. ; Kuramoto, Naoki ; Fujii, Kenichi
Author_Institution :
Nat. Metrol. Inst. of Japan (NMIJ), AIST, Tsukuba, Japan
Abstract :
The homogeneity of the lattice spacing of silicon single crystals was investigated by the self-referenced lattice comparator. Strain measurements were performed on single crystals from Avo28 ingot, which was used to determine the Avogadro constant. A swirl pattern was observed for the sample of 9.R1 cut from the Avo28 ingot.
Keywords :
crystal defects; crystal structure; deformation; elemental semiconductors; ingots; lattice constants; silicon; strain measurement; 9.R1 Avo28 ingot; Avogadro constant; Si; homogeneity characterization; lattice spacing; self-referenced lattice comparator; single crystals; strain measurements; swirl pattern; Carbon; Crystals; Impurities; Lattices; Nonhomogeneous media; Semiconductor device measurement; Silicon; Avogadro constant; impurity; lattice comparator; lattice spacing; silicon single crystal;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
Conference_Location :
Rio de Janeiro
Print_ISBN :
978-1-4799-5205-2
DOI :
10.1109/CPEM.2014.6898428
