Investigations of parallel connected IGBT´s using electromagnetic field analysis

Chip current imbalances caused by the structure and layout of main circuit and gate circuit in an insulated gate bipolar transistor (IGBT) module were analyzed using three-dimensional electromagnetic analysis. To confirm the results of the analysis, we also measured the current of each chip using a test module. A good agreement between the analytical result and the measurement result was achieved. Furthermore, we were able to specify the key factors of current imbalance and the effectiveness of the design using three-dimensional electromagnetic analysis was proven