Formation of silicon Ultra Shallow Junction by nonmelt excimer laser treatment

Implementation of plasma doping and nanosecond laser annealing in the non-melt regime has shown to hold great promise for the realization of ultra shallow junctions, designed for the sub 45 nm node. This work includes extensive simulation of these two emerging techniques using the Synopsys Sentaurus Process software tool which are compared with experimental data after each process step. The results reveal consistency between simulation and experiment. It is thus concluded that existing simulation approach based mostly on kinetic Monte-Carlo method allows for sufficient physical understanding of the underlying mechanisms for these advanced process steps.