Improvement of resistive switching properties in ZrO2- based ReRAM with implanted metal ions

Author

Liu, Qi ; Liu, Ming ; Long, Shibing ; Wang, Wei ; Zhang, Manhong ; Wang, Qin ; Chen, Junning

Author_Institution

Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

221

Lastpage

224

Abstract

In this letter, we fabricate Cu/ZrO₂:Au/Pt and Cu/ZrO₂:Ti/Pt devices via implanting Au or Ti ions. We systematic investigate the resistance switching properties of the two types of metal doped ZrO₂-based resistance random access memory. Compared with the undoped (Cu/ZrO₂/Pt) device, the metal doped devices show free-electroforming process, narrow distribution of the switching parameters and high device yield. The formation and rupture of conductive filaments with metal ions or oxygen vacancies are suggested to be responsible for the resistive switching phenomenon. The doped Au or Ti impurities influence the distribution and concentration of metal ions or oxygen vacancies in the ZrO₂ crystal lattice, improving resistance switching properties of ZrO₂-based ReRAM.

Keywords

electrical resistivity; electroforming; ion implantation; random-access storage; semiconductor doping; zirconium compounds; Cu-ZrO₂:Au-Pt; Cu-ZrO₂:Ti-Pt; ReRAM; conductive filament; free-electroforming process; high device yield; implanted metal ion; metal doped device; metal ion concentration; metal ion distribution; resistance random access memory; resistive switching; switching parameter; Annealing; CMOS technology; Electrodes; Gold; Impurities; Ion implantation; Lattices; Random access memory; Reproducibility of results; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Conference_Location

Athens

ISSN

1930-8876

Print_ISBN

978-1-4244-4351-2

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2009.5331613

Filename

5331613