Title :
Precision measurement of potential-profile-tunable electron pump
Author :
Myung-Ho Bae ; Ye-Hwan Ahn ; Seo, Munkyo ; Fletcher, J.D. ; Giblin, S.P. ; Kataoka, Masayoshi ; Yunchul Chung ; Nam Kim
Author_Institution :
Korea Res. Inst. of Stand. & Sci., Daejeon, South Korea
Abstract :
We performed a precision measurement of a single parameterized electron pump, where the potential profile for a quantum dot was manipulated by multiple top metal gates. With an optimized gate configuration, and driving the pump with a sinusoidal waveform at f = 0.95 GHz at B = 11 T and T = 0.5 K, the deviation of the pumped current from ef, ΔIP = (IP-ef)/ef = (-0.16 ± 1.66) ppm. Our finding is very promising for development of the quantum dot pump as a current standard device.
Keywords :
electric current measurement; quantum gates; semiconductor quantum dots; waveform analysis; current standard device; multiple top metal gates; optimized gate configuration; potential profile tunable electron pump; precision measurement; quantum dot pump; sinusoidal waveform; Current measurement; Electric potential; IP networks; Logic gates; Quantum dots; Standards; Uncertainty; Measurement; precision measurements; uncertainty;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
Conference_Location :
Rio de Janeiro
Print_ISBN :
978-1-4799-5205-2
DOI :
10.1109/CPEM.2014.6898447
