Title :
Extraction of equivalent electrical models for damascene MIM capacitors in a standard 120 nm CMOS technology for ultra wide band applications
Author :
Lemoigne, P. ; Arnould, J.-D. ; Bailly, P.-E. ; Corrao, N. ; Benech, Ph. ; Thomas, M. ; Farcy, A. ; Torres, J.
Author_Institution :
IMEP UMR CNRS, CNRS-INPG-UJF, Grenoble
Abstract :
Metal-insulator-metal (MIM) capacitors are key components in radio frequency integrated circuits. In this paper, several 0.12 mum-CMOS Cu-Si3N4-Cu capacitors realized with damascene architecture and whose process allows high-k dielectric compatibility have been designed and characterised from 45 MHz to 40 GHz. Large band equivalent electrical models have been carried out and commented
Keywords :
CMOS integrated circuits; MIM devices; capacitors; radiofrequency integrated circuits; ultra wideband technology; 45 MHz to 40 GHz; CMOS technology; damascene MIM capacitors; dielectric compatibility; equivalent electrical models; metal-insulator-metal capacitors; radio frequency integrated circuits; ultra wideband applications; CMOS technology; Copper; Insulation; Integrated circuit interconnections; MIM capacitors; Permittivity; Semiconductor device modeling; Silicon on insulator technology; Space technology; Ultra wideband technology;
Conference_Titel :
IEEE Industrial Electronics, IECON 2006 - 32nd Annual Conference on
Conference_Location :
Paris
Print_ISBN :
1-4244-0390-1
DOI :
10.1109/IECON.2006.347533
