Title :
A comparison study between double and single gate p-IMOS
Author :
Hassani, F.A. ; Fathipour, M. ; Mehran, M.
Author_Institution :
Univ. of Tehran, Tehran
Abstract :
A double gate p-IMOS (DG p-IMOS) as well as a process definition for this device is proposed. Simulation studies show that at 400 (K) this device provides smaller subthreshold slope and threshold voltage than a single gate p-IMOS (SG p- IMOS). The ON/OFF current ratio for the DG p-IMOS is larger than that of an equivalent SG p-IMOS. Moreover, the double gate device has higher transconductance than the single gate device. The DG p-IMOS structural parameters affect its electrical characteristics. Reduction of the body thickness tends to lower threshold voltage and increase ON/OFF current ratio. Furthermore, for a given spacing between source and drain threshold voltage reduces as the gate length is increased.
Keywords :
MOS integrated circuits; ON-OFF current ratio; body thickness reduction; double-single gate p-IMOS; single gate device; subthreshold slope; threshold voltage; Doping; Electric variables; Electron mobility; Fabrication; Impact ionization; MOSFET circuits; Space charge; Temperature; Threshold voltage; Tunneling; DG p-IMOS; ON/OFF current ratio; SG p-IMOS; electrical characteristics; process definition;
Conference_Titel :
AFRICON 2007
Conference_Location :
Windhoek
Print_ISBN :
978-1-4244-0987-7
Electronic_ISBN :
978-1-4244-0987-7
DOI :
10.1109/AFRCON.2007.4401526
