Title :
Table of contents
Abstract :
The following topics are dealt with: bipolar device physics; microwave and millimeter wave building blocks; virtual technology and high level modeling; ultra high performance SiGe bipolar/BiCMOS; analog circuit techniques; mixers and LNAs; 4G and millimeter wave power amplifier design; optimization of RF devices and process modules; advanced noise modeling and characterization;circuit characterization and model parameter extraction; front end ICs for radar and mobile applications; and power devices and ESD.
Keywords :
BiCMOS integrated circuits; analogue circuits; bipolar MIMIC; bipolar MMIC; bipolar transistors; circuit noise; circuit optimisation; circuit simulation; electrostatic discharge; field effect MIMIC; field effect MMIC; integrated circuit design; low noise amplifiers; microwave integrated circuits; millimetre wave amplifiers; mixers (circuits); mobile radio; power amplifiers; power semiconductor devices; radar; 4G power amplifier design; BiCMOS; ESD; LNA; RF device optimization; RF device process module; SiGe bipolar transistor; analog circuit technique; bipolar device; circuit characterization; front end IC; high level modeling; microwave building blocks; millimeter wave building blocks; millimeter wave power amplifier design; mixers; mobile application; model parameter extraction; noise modeling; power device; radar application; virtual technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082733
