DocumentCode
2364260
Title
An improved EKV model for partially depleted SOI devices
Author
Alvarado, Joaquín ; Cerdeira, Antonio
Author_Institution
Seccion de Electronica del Estado Solido, CINVESTAV-IPN, Mexico City, Mexico
fYear
2005
fDate
7-9 Sept. 2005
Firstpage
215
Lastpage
218
Abstract
The modeling of MOSFET for analog applications, using long and short channel devices, requires compact models which describes the transistor behavior with more precision including the high order derivatives. In the present paper an improvement of the EKV model is presented, using the same parameters. A comparison with PD SOI MOSFETs of different channel length shows a very good agreement between experimental and modeled data.
Keywords
MOSFET; analogue circuits; semiconductor device models; silicon-on-insulator; EKV model; MOSFET modeling; PD SOI MOSFET; analog application; partially depleted SOI device; transistor behavior; Capacitance; Current-voltage characteristics; Data mining; Equations; Immune system; Interpolation; MOSFET circuits; Parameter extraction; Thermal factors; Threshold voltage; EKV; MOSFET modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Electronics Engineering, 2005 2nd International Conference on
Print_ISBN
0-7803-9230-2
Type
conf
DOI
10.1109/ICEEE.2005.1529611
Filename
1529611
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