Fundamental mode colpitts VCOs at 115 and 165-GHz

Author

Zhao, Yan ; Heinemann, Bernd ; Pfeiffer, Ullrich R.

Author_Institution

Univ. of Wuppertal, Wuppertal, Germany

fYear

2011

fDate

9-11 Oct. 2011

Firstpage

33

Lastpage

36

Abstract

Two fundamental mode voltage controlled oscillators (VCO) at 115 and 165 GHz manufactured in a f_T/f_max=280/435-GHz SiGe Bipolar technology are presented. A differential Colpitts topology is used in both VCO designs, and the phase noise optimization is discussed. Without on-chip buffer, the 115-GHz VCO delivers -6.6-dBm output power with a 1.6-GHz tuning range and a -80 dBc/Hz phase noise at 100-kHz offset, and the 165-GHz VCO provides -15 dBm power with a 7.6-GHz tuning range and a -79 dBc/Hz phase noise at 500-kHz offset. Two VCOs consume 30 mW and 46 mW from a 3-V and a 4.6-V power supply respectively.

Keywords

Ge-Si alloys; bipolar integrated circuits; field effect MIMIC; millimetre wave oscillators; phase noise; voltage-controlled oscillators; Colpitts VCO; MIMIC; SiGe; SiGe bipolar technology; frequency 115 GHz; frequency 165 GHz; frequency 280 GHz; frequency 435 GHz; fundamental mode voltage controlled oscillators; on-chip buffer; phase noise optimization; power 30 mW; power 46 mW; tuning range; voltage 30 V; voltage 4.6 V; CMOS integrated circuits; Phase noise; Silicon germanium; Transistors; Tuning; Voltage-controlled oscillators; Colpitts; fundamental mode; low phase noise; voltage controlled oscillator (VCO);

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE

Conference_Location

Atlanta, GA

ISSN

1088-9299

Print_ISBN

978-1-61284-165-6

Type

conf

DOI

10.1109/BCTM.2011.6082744

Filename

6082744