Electro-thermal dynamic simulation and thermal spreading impedance modeling of Si-Ge HBTs

In this paper, a new and simple approach simulating electro-thermal dynamic behaviour of Heterojunction Bipolar Transistors (HBTs) has been demonstrated. Time domain junction temperature variations at different frequency and, therefore, thermal spreading impedance have been obtained numerically by means of 3D device simulations and which has been verified through low frequency scattering parameter measurements for different geometry of transistors. A physical electro-thermal recursive network has been employed for HiCuM compact model simulation and thermal parameters extraction.