• DocumentCode
    2364317
  • Title

    Improved lumped charge model for high voltage power diode and automated extraction procedure

  • Author

    Bellini, M. ; Stevanovic, I. ; Prada, D.

  • Author_Institution
    Corp. Res., ABB Switzerland Ltd., Dättwil, Switzerland
  • fYear
    2011
  • fDate
    9-11 Oct. 2011
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    The “lumped charge” power diode compact model is extended including impact ionization while maintaining the low computational cost. The new model can better reproduce the shape of the current peak during reverse recovery, allowing for more predictive EMI/EMC simulations. The parameter extraction procedure is also improved and automated through multi-objective genetic algorithms, resulting in very good agreement between model and measurements. Finally, calibrated TCAD simulations are used to understand the limitations of the compact model.
  • Keywords
    circuit optimisation; electromagnetic compatibility; electromagnetic interference; genetic algorithms; power semiconductor diodes; semiconductor device models; TCAD simulations; automated extraction procedure; high voltage power diode; impact ionization; improved lumped charge model; lumped charge power diode compact model; multiobjective genetic algorithms; parameter extraction procedure; predictive EMI-EMC simulations; reverse recovery; Computational modeling; Impact ionization; Integrated circuit modeling; Mathematical model; Semiconductor device modeling; Semiconductor diodes; Semiconductor process modeling; bipolar modeling and simulation; device physics; parameter extraction; power semiconductor device; semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
  • Conference_Location
    Atlanta, GA
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-61284-165-6
  • Type

    conf

  • DOI
    10.1109/BCTM.2011.6082747
  • Filename
    6082747