• DocumentCode
    2364357
  • Title

    Towards THz SiGe HBTs

  • Author

    Chevalier, P. ; Meister, T.F. ; Heinemann, B. ; Van Huylenbroeck, S. ; Liebl, W. ; Fox, A. ; Sibaja-Hernandez, A. ; Chantre, A.

  • Author_Institution
    STMicroelectron., Crolles, France
  • fYear
    2011
  • fDate
    9-11 Oct. 2011
  • Firstpage
    57
  • Lastpage
    65
  • Abstract
    This paper summarizes the technological developments carried out on SiGe HBTs in the frame of the European project DOTFIVE. The architectures of the different partners and their performances are presented and discussed showing that the project objectives have been met.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; millimetre wave transistors; European project DOTFIVE; SiGe; heterojunction bipolar transistors; millimetre wave transistors; Epitaxial growth; Fabrication; Heterojunction bipolar transistors; Resistance; Silicon carbide; Silicon germanium; Heterojunction bipolar transistors; Millimeter wave transistors; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
  • Conference_Location
    Atlanta, GA
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-61284-165-6
  • Type

    conf

  • DOI
    10.1109/BCTM.2011.6082749
  • Filename
    6082749
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2364357