Title :
Towards THz SiGe HBTs
Author :
Chevalier, P. ; Meister, T.F. ; Heinemann, B. ; Van Huylenbroeck, S. ; Liebl, W. ; Fox, A. ; Sibaja-Hernandez, A. ; Chantre, A.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
This paper summarizes the technological developments carried out on SiGe HBTs in the frame of the European project DOTFIVE. The architectures of the different partners and their performances are presented and discussed showing that the project objectives have been met.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave transistors; European project DOTFIVE; SiGe; heterojunction bipolar transistors; millimetre wave transistors; Epitaxial growth; Fabrication; Heterojunction bipolar transistors; Resistance; Silicon carbide; Silicon germanium; Heterojunction bipolar transistors; Millimeter wave transistors; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082749
