Title :
SiGe:C HBT architecture with epitaxial external base
Author :
Fox, A. ; Heinemann, B. ; Barth, R. ; Marschmeyer, S. ; Wipf, Ch ; Yamamoto, Y.
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
We present a novel double-polysilicon (DP) HBT technology with a SiGe:C base fabricated by selective epitaxial growth (SEG), in which the external base is formed by in-situ doped epitaxy completely after the internal base. This approach aims to achieve a lower parasitic base resistance compared to our previously reported DP-SEG technology [8], while keeping a low capacitive lateral base link arrangement. We demonstrate fT/fmax of 310GHz/480GHz, as well as a CML gate delay of 1.9ps, achieving the lowest value reported so far.
Keywords :
Ge-Si alloys; epitaxial growth; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor doping; CML gate delay; HBT architecture; SiGe:C; double polysilicon HBT technology; epitaxial external base; frequency 310 GHz; frequency 480 GHz; in-situ doped epitaxy; low capacitive lateral base link arrangement; parasitic base resistance; selective epitaxial growth; Current density; Delay; Epitaxial growth; Heterojunction bipolar transistors; Logic gates; Silicon; Silicon germanium; Heterojunction bipolar transistors; Millimeter wave technology; Millimeter wave transistors; Silicon bipolar process technology; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082751
