Title :
A millimeter-wave capable SiGe BiCMOS process with 270GHz FMAX HBTs designed for high volume manufacturing
Author :
Preisler, E. ; Talor, G. ; Howard, D. ; Yan, Z. ; Booth, R. ; Zheng, J. ; Chaudhry, S. ; Racanelli, M.
Author_Institution :
TowerJazz, Newport Beach, CA, USA
Abstract :
A new SiGe BiCMOS process, SBC18H3 is described which features SiGe HBTs with 240GHz FT and 270 GHz FMAX. The HBT devices are described in detail along with several other mm-wave components included in the process. The process is based on a high-volume manufacturing-proven 0.18um SiGe BiCMOS base platform which has been running at TowerJazz for almost a decade and has been used to produce over 100,000 8" wafers. Additional mm-wave enablement devices offered in the process include MOS varactors, P-I-N diodes and sub-10fF MIM capacitors. Additional key metrics for the SiGe HBT device include an NFMIN of 2dB at 40GHz, a BVCEO of 1.6V and a DC current gain of 1200.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; millimetre wave integrated circuits; p-i-n diodes; varactors; HBT; MIM capacitors; MOS varactors; P-I-N diodes; SBC18H3; SiGe; TowerJazz; frequency 240 GHz; frequency 270 GHz; frequency 40 GHz; heterojunction bipolar transistors; high volume manufacturing; millimeter-wave capable BiCMOS process; size 0.18 mum; voltage 1.6 V; BiCMOS integrated circuits; Heterojunction bipolar transistors; Insertion loss; Manufacturing; Radio frequency; Silicon germanium; Varactors; Heterojunction Bipolar Transistors; Millimeter Wave Transistors; Silicon bipolar/BiCMOS process technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082752
