• DocumentCode
    2364498
  • Title

    Integrated injection logic in a high-speed SiGe bipolar technology

  • Author

    Aufinger, Klaus ; Knapp, Herbert ; Boguth, Sabine ; Gerasika, Oleksiy ; Lachner, Rudolf

  • Author_Institution
    Infineon Technol. AG, Munich, Germany
  • fYear
    2011
  • fDate
    9-11 Oct. 2011
  • Firstpage
    87
  • Lastpage
    90
  • Abstract
    A device for integrated injection logic (I2L) circuits is implemented in a high speed bipolar technology without any changes to the underlying production process. Ring oscillator and frequency divider circuits are built with these devices and are experimentally characterized. A gate delay of 1 ns is obtained at a current of approximately 25 μA per stage.
  • Keywords
    Ge-Si alloys; bipolar transistors; frequency dividers; logic circuits; oscillators; semiconductor materials; SiGe; frequency divider circuits; gate delay; high-speed bipolar transistor technology; integrated injection logic circuits; production process; ring oscillator; time 1 ns; Logic gates; MMICs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
  • Conference_Location
    Atlanta, GA
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-61284-165-6
  • Type

    conf

  • DOI
    10.1109/BCTM.2011.6082755
  • Filename
    6082755
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2364498