Title :
Integrated injection logic in a high-speed SiGe bipolar technology
Author :
Aufinger, Klaus ; Knapp, Herbert ; Boguth, Sabine ; Gerasika, Oleksiy ; Lachner, Rudolf
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
A device for integrated injection logic (I2L) circuits is implemented in a high speed bipolar technology without any changes to the underlying production process. Ring oscillator and frequency divider circuits are built with these devices and are experimentally characterized. A gate delay of 1 ns is obtained at a current of approximately 25 μA per stage.
Keywords :
Ge-Si alloys; bipolar transistors; frequency dividers; logic circuits; oscillators; semiconductor materials; SiGe; frequency divider circuits; gate delay; high-speed bipolar transistor technology; integrated injection logic circuits; production process; ring oscillator; time 1 ns; Logic gates; MMICs;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082755
