DocumentCode
23645
Title
A Systematic Loss Analysis Method for Rear-Passivated Silicon Solar Cells
Author
Wong, Johnson ; Duttagupta, Shubham ; Stangl, Rolf ; Hoex, Bram ; Aberle, Armin G.
Author_Institution
Solar Energy Res. Inst. of Singapore, Singapore, Singapore
Volume
5
Issue
2
fYear
2015
fDate
Mar-15
Firstpage
619
Lastpage
626
Abstract
By combining commonly available solar cell characterization methods with easy-to-prepare test structures and partially processed rear-passivated solar cells from the production line, we show that various cell loss mechanisms can be quantified in exquisite detail to generate process-related diagnostics. An example monocrystalline silicon localized back surface field solar cell type is examined using a systematic routine that breaks down the factors limiting open-circuit voltage, short-circuit current, and fill factor (FF) to identify the cell structure´s headroom for improvement.
Keywords
elemental semiconductors; passivation; silicon; solar cells; Si; cell loss mechanisms; cell structure; easy-to-prepare test structures; fill factor; monocrystalline silicon localized back surface field solar cell; open-circuit voltage; partially processed rear-passivated solar cells; process-related diagnostics; production line; rear-passivated silicon solar cells; short-circuit current; systematic loss analysis; Current density; Lighting; Metallization; Passivation; Photovoltaic cells; Silicon; Characterization; Si PV modeling; metrology;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2014.2388071
Filename
7012010
Link To Document