DocumentCode :
23645
Title :
A Systematic Loss Analysis Method for Rear-Passivated Silicon Solar Cells
Author :
Wong, Johnson ; Duttagupta, Shubham ; Stangl, Rolf ; Hoex, Bram ; Aberle, Armin G.
Author_Institution :
Solar Energy Res. Inst. of Singapore, Singapore, Singapore
Volume :
5
Issue :
2
fYear :
2015
fDate :
Mar-15
Firstpage :
619
Lastpage :
626
Abstract :
By combining commonly available solar cell characterization methods with easy-to-prepare test structures and partially processed rear-passivated solar cells from the production line, we show that various cell loss mechanisms can be quantified in exquisite detail to generate process-related diagnostics. An example monocrystalline silicon localized back surface field solar cell type is examined using a systematic routine that breaks down the factors limiting open-circuit voltage, short-circuit current, and fill factor (FF) to identify the cell structure´s headroom for improvement.
Keywords :
elemental semiconductors; passivation; silicon; solar cells; Si; cell loss mechanisms; cell structure; easy-to-prepare test structures; fill factor; monocrystalline silicon localized back surface field solar cell; open-circuit voltage; partially processed rear-passivated solar cells; process-related diagnostics; production line; rear-passivated silicon solar cells; short-circuit current; systematic loss analysis; Current density; Lighting; Metallization; Passivation; Photovoltaic cells; Silicon; Characterization; Si PV modeling; metrology;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2014.2388071
Filename :
7012010
Link To Document :
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