• DocumentCode
    23645
  • Title

    A Systematic Loss Analysis Method for Rear-Passivated Silicon Solar Cells

  • Author

    Wong, Johnson ; Duttagupta, Shubham ; Stangl, Rolf ; Hoex, Bram ; Aberle, Armin G.

  • Author_Institution
    Solar Energy Res. Inst. of Singapore, Singapore, Singapore
  • Volume
    5
  • Issue
    2
  • fYear
    2015
  • fDate
    Mar-15
  • Firstpage
    619
  • Lastpage
    626
  • Abstract
    By combining commonly available solar cell characterization methods with easy-to-prepare test structures and partially processed rear-passivated solar cells from the production line, we show that various cell loss mechanisms can be quantified in exquisite detail to generate process-related diagnostics. An example monocrystalline silicon localized back surface field solar cell type is examined using a systematic routine that breaks down the factors limiting open-circuit voltage, short-circuit current, and fill factor (FF) to identify the cell structure´s headroom for improvement.
  • Keywords
    elemental semiconductors; passivation; silicon; solar cells; Si; cell loss mechanisms; cell structure; easy-to-prepare test structures; fill factor; monocrystalline silicon localized back surface field solar cell; open-circuit voltage; partially processed rear-passivated solar cells; process-related diagnostics; production line; rear-passivated silicon solar cells; short-circuit current; systematic loss analysis; Current density; Lighting; Metallization; Passivation; Photovoltaic cells; Silicon; Characterization; Si PV modeling; metrology;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2014.2388071
  • Filename
    7012010