CVD graphene for electrical quantum metrology

Author

Thodkar, K. ; Nef, C. ; Fu, Wei ; Schonenberger, C. ; Calame, M. ; Luond, Felix ; Overney, Frederic ; Jeanneret, Blaise

Author_Institution

Phys. Dept., Univ. of Basel, Basel, Switzerland

fYear

2014

fDate

24-29 Aug. 2014

Firstpage

540

Lastpage

541

Abstract

Graphene, a single atom thick material with carbon atoms arranged in a hexagonal lattice is widely being touted as the new wonder material for its interesting electrical and mechanical properties [1]. In particular, the observation of the Quantum Hall effect (QHE) in graphene has opened the way for a new quantum standard of resistance. Our research focuses on QHE and Raman characterization of chemical vapor deposited (CVD) graphene. In this paper we describe the CVD growth of graphene films, their transfer to substrates and their characterization using Raman spectroscopy and electrical transport measurements.

Keywords

Raman spectra; chemical vapour deposition; electric variables measurement; graphene; quantum Hall effect; C; CVD graphene; Raman spectroscopy; chemical vapor deposition; electrical quantum metrology; electrical transport measurements; quantum Hall effect; Electrical resistance measurement; Films; Graphene; Magnetic field measurement; Resistance; Substrates; Temperature measurement; Chemical Vapor Deposition (CVD); Copper (Cu); Graphene (G); Quantum Hall effect (QHE);

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on

Conference_Location

Rio de Janeiro

ISSN

0589-1485

Print_ISBN

978-1-4799-5205-2

Type

conf

DOI

10.1109/CPEM.2014.6898498

Filename

6898498