Title :
Analytical modelling of Early voltage and Current Gain of Si1−yGey Heterojunction Bipolar Transistor
Author :
Rabbi, Fazle ; Arafat, Yeasir ; Khan, M. Ziaur Rahman
Author_Institution :
Dept. of EEE, BUET, Dhaka, Bangladesh
Abstract :
Analytical modelling of Early Voltage (VA) and Common Emitter Current Gain (β) of Heterojunction Bipolar Transistor (HBT) are derived considering field dependent mobility, doping dependent mobility, Band Gap Narrowing (BGN), changes in density of state (DOS) and velocity saturation effect. BGN was considered due to heavy doping and presence of Germanium. The effect of various base doping profiles (Gaussian, exponential and uniform) and germanium profile (trapezoidal/triangular/box) on VA and β are addressed. The results of the analysis are compared with the data available in the previous research work.
Keywords :
Ge-Si alloys; carrier mobility; doping profiles; electronic density of states; energy gap; heterojunction bipolar transistors; semiconductor materials; Si1-yGey; band gap narrowing; common emitter current gain HBT; density of state; doping dependent mobility; doping profiles; field dependent mobility; germanium profile; heterojunction bipolar transistor; velocity saturation effect; Doping profiles; Electric fields; Equations; Germanium; Heterojunction bipolar transistors; Junctions; Common Emitter Current Gain; Early Voltage; Field Dependent Mobility; Gaussian Profile; SiGe base HBT;
Conference_Titel :
Electronic Devices, Systems and Applications (ICEDSA), 2011 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-61284-388-9
DOI :
10.1109/ICEDSA.2011.5959034
