DocumentCode :
2364721
Title :
Very high power PEBB technology
Author :
Steimer, P.K. ; Apeldoorn, O. ; Odegård, B. ; Bernet, S. ; Brückner, T.
Author_Institution :
Power Electron. & MV Drives, ABB Switzerland Ltd., Turgi
fYear :
2005
fDate :
11-14 Sept. 2005
Abstract :
In the field of power electronics the power electronics building block (PEBB) is a key functional component. With regard to the applications, it is of outmost importance that the PEBB technology used is compact, cost-effective and reliable. The IGCT is at the forefront of technology in high power, medium-voltage applications. For further improvement in size and costs a new ANPC IGCT PEBB has been developed. The main new technologies to achieve higher powers are the new low-inductive gate-unit to maintain hardswitched operation up to more than 6000 A, the increased SOA of the 91 mm asymmetric IGCT (4 inch technology) and the antiparallel diode up to more than 6000 A and the active NPC technology, which allows an optimum and equal loss balancing in all power semiconductors. The maximum inverter output power has been increased by 80% with a parallel increase in the power density and reduced costs per kVA
Keywords :
invertors; power convertors; thyristors; 91 mm; IGCT; active NPC technology; antiparallel diode; high power PEBB technology; inverter; low-inductive gate-unit; power density; power electronics building block; power semiconductors; Communication system control; Costs; Distributed power generation; HVDC transmission; Maintenance; Medium voltage; Power electronics; Power system protection; Temperature sensors; Uniform resource locators; FACTS; High power discrete device; IGBT; IGCT; Multilevel converters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications, 2005 European Conference on
Conference_Location :
Dresden
Print_ISBN :
90-75815-09-3
Type :
conf
DOI :
10.1109/EPE.2005.219729
Filename :
1665919
Link To Document :
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