• DocumentCode
    2364721
  • Title

    Very high power PEBB technology

  • Author

    Steimer, P.K. ; Apeldoorn, O. ; Odegård, B. ; Bernet, S. ; Brückner, T.

  • Author_Institution
    Power Electron. & MV Drives, ABB Switzerland Ltd., Turgi
  • fYear
    2005
  • fDate
    11-14 Sept. 2005
  • Abstract
    In the field of power electronics the power electronics building block (PEBB) is a key functional component. With regard to the applications, it is of outmost importance that the PEBB technology used is compact, cost-effective and reliable. The IGCT is at the forefront of technology in high power, medium-voltage applications. For further improvement in size and costs a new ANPC IGCT PEBB has been developed. The main new technologies to achieve higher powers are the new low-inductive gate-unit to maintain hardswitched operation up to more than 6000 A, the increased SOA of the 91 mm asymmetric IGCT (4 inch technology) and the antiparallel diode up to more than 6000 A and the active NPC technology, which allows an optimum and equal loss balancing in all power semiconductors. The maximum inverter output power has been increased by 80% with a parallel increase in the power density and reduced costs per kVA
  • Keywords
    invertors; power convertors; thyristors; 91 mm; IGCT; active NPC technology; antiparallel diode; high power PEBB technology; inverter; low-inductive gate-unit; power density; power electronics building block; power semiconductors; Communication system control; Costs; Distributed power generation; HVDC transmission; Maintenance; Medium voltage; Power electronics; Power system protection; Temperature sensors; Uniform resource locators; FACTS; High power discrete device; IGBT; IGCT; Multilevel converters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications, 2005 European Conference on
  • Conference_Location
    Dresden
  • Print_ISBN
    90-75815-09-3
  • Type

    conf

  • DOI
    10.1109/EPE.2005.219729
  • Filename
    1665919