Title :
An ultra wide-band low-noise amplifier: Design and simulation using ED02AH and RFCMOS 0.18 µm technologies
Author :
Hassani, H. ; Alahyari, A. ; Habibzadeh, A. ; Dousti, M.
Author_Institution :
Malayer Branch, Sama Tech. & Vocational Training Coll., Islamic Azad Univ., Malayer, Iran
Abstract :
The design and simulation of a wide-band RF amplifier has been presented. In this study, the design of one-stage and two-stage amplifier is investigated respectively under two types of technologies: ED02AH and RFCMOS 0.18 μm. We proposed the design of an amplifier in which its noise figure is better than 5 dB and its gain is more than 10 dB. In addition, input and output impedance matching and frequency stability from 2.5 to 30.5 GHz are considered simultaneously. The presented paper intended to achieve suitable gain, noise figure, and power consumption in the band of 2.5 GHz to 30.5 GHz utilizing the least elements.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; integrated circuit design; integrated circuit noise; low noise amplifiers; ultra wideband technology; ED02AH; RFCMOS technologies; frequency 2.5 GHz to 30.5 GHz; noise figure; one-stage amplifier; size 0.18 mum; two-stage amplifier; ultrawide-band low-noise amplifier; Gain; Impedance matching; Low-noise amplifiers; Noise figure; Radio frequency; Transistors; Wideband; impedance matching; one-stage low noise amplifier; wide-band low-noise two-stage amplifier;
Conference_Titel :
Electronic Devices, Systems and Applications (ICEDSA), 2011 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-61284-388-9
DOI :
10.1109/ICEDSA.2011.5959036
