Latch-up free 600 V SOI gate driver IC for medium power and high temperature applications

Author

Robberg, M. ; Herzer, R. ; Pawel, S.

Author_Institution

SEMIKRON Elektronik, Nuremberg

fYear

2005

fDate

11-14 Sept. 2005

Abstract

The design, functionality and measurements of fully integrated 600 V SOI gate drive ICs are presented. The two-, six- and seven-channel HVIC target different motor drive systems for low power and medium power applications. Dielectric device isolation and the detailed circuit design ensure operation up to a temperature of 200degC. Robust signal processing has been given highest attention at all design stages. A dedicated signal reconstruction topology is presented to provide maximum immunity against parasitic coupling from the power plane. The measurements confirming the safe operation of the IC´s are given

Keywords

dielectric devices; motor drives; power integrated circuits; signal reconstruction; silicon-on-insulator; 600 V; HVIC target; SOI; circuit design; dielectric device isolation; gate driver; maximum immunity; motor drive systems; parasitic coupling; signal processing; signal reconstruction topology; Application specific integrated circuits; Circuit synthesis; Dielectric devices; Dielectric measurements; Driver circuits; Integrated circuit measurements; Motor drives; Robustness; Signal processing; Temperature; High voltage IC´s; Power integrated circuit; SOI-device; Smart Power; System integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2005 European Conference on

Conference_Location

Dresden

Print_ISBN

90-75815-09-3

Type

conf

DOI

10.1109/EPE.2005.219732

Filename

1665922