Title :
Terahertz operation of GaAs/AlGaAs metal-semiconductor-metal photodetectors
Author :
Ryzhii, M. ; Khmyrova, I. ; Ryzhii, V. ; Willander, M.
Author_Institution :
Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
The paper deals with a Monte Carlo particle study of MSM photodetectors operation in THz range of signal frequencies. The obtained numerical results are discussed invoking the developed analytical model of the MSM photodetectors. We consider planar interdigitated MSM photodetectors made of a thin GaAs absorbing layer on a AlGaAs substrate
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; infrared detectors; metal-semiconductor-metal structures; photodetectors; semiconductor device models; submillimetre wave detectors; AlGaAs; AlGaAs substrate; GaAs; GaAs/AlGaAs metal-semiconductor-metal photodetectors; MSM photodetectors; Monte Carlo particle study; THz range; planar interdigitated MSM photodetectors; signal frequencies; terahertz operation; thin GaAs absorbing layer; Charge carrier processes; Electrons; Frequency dependence; Gallium arsenide; Monte Carlo methods; Optical modulation; Optical pulses; Photodetectors; Photonic band gap; Schottky barriers;
Conference_Titel :
Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on
Conference_Location :
Leeds
Print_ISBN :
0-7803-4903-2
DOI :
10.1109/THZ.1998.731722
