DocumentCode :
2364823
Title :
Extended high voltage HBTs in a high-performance BiCMOS process
Author :
Mertens, H. ; Magnée, P. H C ; Donkers, J.J.T.M. ; Gridelet, E. ; Huiskamp, P. ; Klaassen, D.B.M. ; Vanhoucke, T.
Author_Institution :
NXP Semicond. Res., Leuven, Belgium
fYear :
2011
fDate :
9-11 Oct. 2011
Firstpage :
158
Lastpage :
161
Abstract :
An approach to integrate extended high voltage (EHV) npn SiGe heterojunction bipolar transitors (HBTs) in a high-performance BiCMOS process is presented. The EHV HBTs are based on a dedicated high-energy implanted phosphorus-doped subcollector. The epitaxially buried arsenic-doped subcollector of the conventional low-voltage (LV) and high-voltage (HV) HBTs, as well as the base-emitter configuration, which is shared between all three HBT types (i.e. LV, HV, and EHV), remains unchanged. The EHV devices that were fabricated are characterized by BVCE0 = 3.5 - 7.7 V, BVCB0 = 14 - 24 V, and peak-fT = 54 - 22 GHz. These figures of merit are tunable across the specified ranges by the subcollector implantation energy and dose. The integration of EHV HBTs in NXP´s high-performance QUBiC4Xi process enables highly integrated transmitter and receiver ICs for microwave and millimeter-wave applications.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; heterojunction bipolar transistors; millimetre wave bipolar transistors; EHV HBT; EHV devices; NXP high-performance QUBiC4Xi process; SiGe; base-emitter configuration; epitaxially buried arsenic-doped subcollector; extended high voltage heterojunction bipolar transistors; frequency 54 GHz to 22 GHz; high-energy implanted phosphorus-doped subcollector; high-performance BiCMOS process; high-voltage HBT; highly integrated receiver IC; highly integrated transmitter IC; low-voltage HBT; voltage 14 V to 24 V; voltage 3.5 V to 7.7 V; BiCMOS integrated circuits; Heterojunction bipolar transistors; Performance evaluation; Resistance; Silicon carbide; Silicon germanium; Tuning; Silicon bipolar/BiCMOS process technology; heterojunction bipolar transistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
ISSN :
1088-9299
Print_ISBN :
978-1-61284-165-6
Type :
conf
DOI :
10.1109/BCTM.2011.6082771
Filename :
6082771
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2364823
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