DocumentCode :
2364868
Title :
An avalanche rugged NPT trench IGBT used in single-ended quasi resonant topology for induction heating appliance
Author :
Kyu Hyun Lee ; Oh, Kwang-Hoon ; Kim, Young-Chul ; Yun, Chong Man
Author_Institution :
Fairchild Semicond., Kyunggi
fYear :
2005
fDate :
11-14 Sept. 2005
Abstract :
A 1000 V NPT (non-punch through) trench IGBT is developed for the single-ended quasi resonant circuit. Optimizing trench cell design and NPT technology, high avalanche ruggedness as well as the outstanding static and dynamic performances is obtained. Comparing the PT trench IGBT having the identical design and processes, it is also empirically shown that the developed NPT trench IGBT has significantly improved avalanche capability under the various test conditions for the IH application using the quasi resonant topology and reduces the instantaneous device failures resulting from inadequate avalanche ruggedness under abnormal operating condition
Keywords :
domestic appliances; induction heating; insulated gate bipolar transistors; 1000 V; avalanche rugged NPT trench IGBT; induction heating appliance; instantaneous device failures reduction; nonpunch through trench IGBT; single-ended quasi resonant topology; Home appliances; Insulated gate bipolar transistors; Process design; RLC circuits; Resonance; Switching loss; TV; Testing; Topology; Voltage; Avalanche Ruggedness; IGBT; Non-punch through (NPT); Single-Ended Quasi Resonant Topology; Trench; lnduction-Heating;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications, 2005 European Conference on
Conference_Location :
Dresden
Print_ISBN :
90-75815-09-3
Type :
conf
DOI :
10.1109/EPE.2005.219739
Filename :
1665929
Link To Document :
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