Title :
SiGe:C profile optimization for low noise performance
Author :
Magnée, P. H C ; van Dalen, R. ; Mertens, H. ; Vanhoucke, T. ; van Velzen, B. ; Huiskamp, P. ; Brunets, I. ; Donkers, J.J.T.M. ; Klaassen, D.B.M.
Author_Institution :
NXP Semicond. Nijmegen, Nijmegen, Netherlands
Abstract :
Today´s state-of-the-art SiGe BiCMOS processes show impressive high-frequency performance, with fT and fMAX exceeding 500GHz. However, SiGe can also offer significant performance gain at more moderate application frequencies. In this paper we discuss the optimization of SiGe heterojunction bipolar transistors (HBTs) for very low noise applications in the 2-10GHz range. By careful tuning of the base-profile, minimum noise figures below 0.55dB and 0.35dB are obtained at 10GHz and 2GHz respectively.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device noise; BiCMOS; HBT; SiGe; frequency 2 GHz to 10 GHz; frequency 500 GHz; heterojunction bipolar transistors; noise figures; profile optimization; BiCMOS integrated circuits; Carbon; Noise; Noise figure; Resistance; Silicon germanium; heterojunction bipolar transistors; integrated circuit noise; semiconductor device noise; silicon bipolar/BiCMOS process technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082773
