SiGe:C profile optimization for low noise performance

Author

Magnée, P. H C ; van Dalen, R. ; Mertens, H. ; Vanhoucke, T. ; van Velzen, B. ; Huiskamp, P. ; Brunets, I. ; Donkers, J.J.T.M. ; Klaassen, D.B.M.

Author_Institution

NXP Semicond. Nijmegen, Nijmegen, Netherlands

fYear

2011

fDate

9-11 Oct. 2011

Firstpage

166

Lastpage

169

Abstract

Today´s state-of-the-art SiGe BiCMOS processes show impressive high-frequency performance, with f_T and f_MAX exceeding 500GHz. However, SiGe can also offer significant performance gain at more moderate application frequencies. In this paper we discuss the optimization of SiGe heterojunction bipolar transistors (HBTs) for very low noise applications in the 2-10GHz range. By careful tuning of the base-profile, minimum noise figures below 0.55dB and 0.35dB are obtained at 10GHz and 2GHz respectively.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device noise; BiCMOS; HBT; SiGe; frequency 2 GHz to 10 GHz; frequency 500 GHz; heterojunction bipolar transistors; noise figures; profile optimization; BiCMOS integrated circuits; Carbon; Noise; Noise figure; Resistance; Silicon germanium; heterojunction bipolar transistors; integrated circuit noise; semiconductor device noise; silicon bipolar/BiCMOS process technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE

Conference_Location

Atlanta, GA

ISSN

1088-9299

Print_ISBN

978-1-61284-165-6

Type

conf

DOI

10.1109/BCTM.2011.6082773

Filename

6082773