Title :
Method for verification of inductor de-embedding accuracy by cross-check of measurements with a LC circuit
Author :
Andrei, C. ; Pasquet, D.
Author_Institution :
NXP Semicond., Colombelles, France
Abstract :
An innovative method for verification of de-embedding errors after inductor on-wafer measurements is presented. This first de-embedding verification method, there were no references found in literature, is easy to implement by designing a LC circuit with a Metal Insulator Metal (MIM) capacitor inside the Ground-Signal-Ground (GSG) test structure used for inductor characterization. The S parameter measurements of LC circuit (L-inductor under test, C-MIM) and of an “open dummy” including the MIM, are used to cross-check the inductor measurements in order to verify the de-embedding accuracy. This verification allows an easy identification of S-parameter measurement issues and of de-embedding in-accuracies, and futures an important gain of time for small signal equivalent circuit extraction. The method has been validated in the case of “8-shaped” inductor fabricated in QuBiC (Quality Bipolar CMOS) process by measurements up to 50 GHz.
Keywords :
CMOS integrated circuits; LC circuits; MIM devices; S-parameters; capacitors; equivalent circuits; inductors; GSG test; LC circuit; MIM capacitor; S-parameter measurements; ground-signal-ground test structure; inductor de-embedding error verification method; inductor on-wafer measurements; metal insulator metal capacitor; quality bipolar CMOS process; small signal equivalent circuit extraction; Accuracy; Capacitance; Inductance; Inductors; Metals; Q factor; Semiconductor device measurement; De-embedding; S-parameters; inductor modeling; small signal equivalent circuit;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082781