Title :
Influence of probe tip calibration on measurement accuracy of small-signal parameters of advanced BiCMOS HBTs
Author :
Rumiantsev, A. ; Sakalas, P. ; Derrier, N. ; Celi, D. ; Schroter, M.
Author_Institution :
Cascade Microtech GmbH, Sacka, Germany
Abstract :
This paper presents investigation results of the probe-tip calibration impact on the BiCMOS HBT small-signal parameter measurement accuracy. Popular calibration procedures were applied on the same data set and followed by the two-step de-embedding from the device dedicated Compete-Open and Complete-Short dummy elements. Experimental results showed that the observed difference in cold HBT parameters and parameters of passive devices was minimized by the de-embedding step. The fT and fMAX demonstrated higher sensitivity to the probe-tip calibration residual errors.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; calibration; heterojunction bipolar transistors; probes; SiGe; advanced BiCMOS HBT; device dedicated compete-open dummy element; device dedicated complete-short dummy element; measurement accuracy; passive device parameter; probe-tip calibration residual error; small-signal parameter measurement accuracy; two-step deembedding; Accuracy; Calibration; Heterojunction bipolar transistors; Impedance; Microwave measurements; Probes; Transmission line measurements; S-Parameters; Silicon-germanium HBT; calibration; de-embedding; silicon bipolar/BiCMOS process technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082782
